Laser diode and method of manufacturing the same

ABSTRACT

A laser capable of improving surge withstand voltage by preventing damage to a read end surface, and a method of manufacturing the same are provided. A laser diode includes a laser resonator between a first end surface as a main emmission end surface and a second end surface facing the first end surface, and the laser diode includes a light absorption inhibition region on the second end surface side of the laser resonator.

CROSS REFERENCES TO RELATED APPLICATIONS

The present invention contains subject matter related to Japanese PatentApplication JP 2006-045312 filed in the Japanese Patent Office on Feb.22, 2006, the entire contents of which being incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a laser diode suitable in the casewhere a very low operating current is desired, and a method ofmanufacturing the same.

2. Description of the Related Art

In a laser diode, in the case where a very low operation current (verylow current consumption) is desired, in general, a design focusing onthe efficiency of a guided wave in a resonator and featuring very highoptical density is adopted. Thereby, while a reduction in the operatingcurrent is achieved, a disadvantage such as a large decline in surgewithstand voltage becomes apparent, so it is necessary to handle thelaser with extra care.

In particular, an InAlGaP-based red laser diode mounted in a portablegame console or the like using a DVD (Digital Versatile Disk) as amedium has a structure in which current consumption is reduced to aminimum. Therefore, compared to a typical laser for replaying DVDs, lowsurge withstand voltage as one characteristic of the laser diode appearsprominently. In some cases, the surge withstand voltage is reduced toapproximately 10 V.

A decline in the surge withstand voltage depends on the material of amirror film arranged on an end surface. As widely used materials of themirror film, an Al₂O₃ single layer for a front end surface (a mainemission end surface) and an Al₂O₃/a-Si multilayer film for a rear endsurface are used. However, in the case where Al₂O₃/a-Si is used for therear end surface in a red laser diode, a-Si slightly absorbs red light,so when a surge current or an overcurrent enters, the rear end surfacebecomes susceptible to damage. This causes an impediment to improvementin the surge withstand voltage.

Therefore, to improve the surge withstand voltage, it can be consideredto change the material of the mirror film on the rear end surface. Morespecifically, a method of using a material such as TiO_(x) instead ofa-Si can be considered (for example, refer to Japanese Unexamined PatentApplication Publication No. 2000-164978).

SUMMARY OF THE INVENTION

However, such an alternative material does not have as high a refractiveindex as a-Si, so there are issues that a necessity to increase thenumber of layers of the mirror film, difficulty in using the most simpleelectron beam evaporation system with short tact, and a necessity tostrictly control a composition ratio to obtain a stable refractiveindex, and compared to a-Si, it is more difficult to handle thealternative material, and its cost tends to be higher. Therefore, thematerial is not usually used for a laser for replay of which costs arenecessary to be reduced.

On the other hand, as a method of reinforcing end surfaces for thepurpose of higher output, in related arts, a method of having aso-called window structure in the front and rear end surfaces is widelyused (for example, refer to Japanese Unexamined Patent ApplicationPublication No. 2000-82863). However, when the window structure isapplied to the laser for replay, a FFP (Far Field Pattern) is reduced,so there is an issue such as deterioration of replay characteristics orconditions of application to an optical system.

Moreover, in general, variations in the FFP tend to be wider by theapplication of the window structure, and specifically in the laser forreplay, a radiation angle is relatively large, so variations in the FFPbecomes wider accordingly, thereby variations in optical couplingbecomes wider.

Further, in a step of forming a laser coupler, for example, by bonding alaser to a photodetection IC (Integrated Circuit) together with a prism,in some cases, the laser emits light at a threshold value or less torecognize the image of a luminous point. At this time, when the windowstructure is provided to the front end surface, a luminous portionbecomes blurred to have wider variations, thereby the recognitionaccuracy is reduced. Luminous point recognition accuracy is an extremelyimportant parameter in terms of high accuracy mounting. In particular,in a process for achieving very high accuracy mounting by passivealignment, a decline in the luminous point recognition accuracy may be acritical issue.

In view of the foregoing, it is desirable to provide a laser diodecapable of improving a surge withstand voltage by preventing damage to arear end surface, and a method of manufacturing the laser diode.

According to an embodiment of the invention, there is provided a laserdiode including a laser resonator between a first end surface as a mainemission end surface and a second end surface facing the first endsurface, the laser diode including: a light absorption inhibition regionon the second end surface side of the laser resonator.

In the laser diode according to the embodiment of the invention, thelight absorption inhibition region is arranged on the second end surfaceside facing the first end surface where light is emitted, so even in thecase where a mirror film on the second end surface is made of a materialwhich absorbs light generated in the laser resonator, the effect oflight absorption is mitigated. Therefore, even if a surge current or anovercurrent is applied, damage to the second end surface is prevented,and a surge withstand voltage is improved.

According to an embodiment of the invention, there is provided a methodof manufacturing a laser diode, the laser diode including a laserresonator between a first end surface as a main emission end surface anda second end surface facing the first end surface, the method includingthe steps of: forming a semiconductor layer including a plurality ofplanned laser resonator regions; forming a light absorption inhibitionregion in the semiconductor layer along a position where the second endsurface is planned to be formed; and forming the first end surface andthe second end surface so that the light absorption inhibition region isdisposed on the second end surface side of the laser resonator.

In the laser diode according to the embodiment of the invention, thelight absorption inhibition region is arranged on the second end surfaceside facing the first end surface as the main emission end surface, soeven in the case where a mirror film on the second end surface is madeof a material which absorbs light generated in the laser resonator, theeffect of light absorption can be mitigated, and damage to the secondend surface due to the application of a surge current or an overcurrentcan be prevented, and a surge withstand voltage can be improved. Inparticular, the laser diode is suitably used in the case where a verylow operating current and very low current consumption are stronglydesired, for example, as a laser for replaying DVDs or the like mountedin a portable game console.

In the method of manufacturing a laser diode according to the embodimentof the invention, after the light absorption inhibition region is formedin the semiconductor layer, the first end surface and the second endsurface are formed so that the light absorption inhibition region isdisposed on the second end surface side of the laser resonator, so thelight absorption inhibition region can be easily arranged on the secondend surface side by adjusting the positions of the first end surface andthe second end surface.

Other and further objects, features and advantages of the invention willappear more fully from the following description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a laser diode according to an embodimentof the invention;

FIG. 2 is a plan view of the laser diode shown in FIG. 1 when viewedfrom a stripe-shaped portion side;

FIG. 3 is a plan view showing a modification of the laser diode shown inFIG. 2;

FIG. 4 is a plan view for describing a method of manufacturing the laserdiode shown in FIG. 1;

FIG. 5 is a plan view for showing a modification of FIG. 4;

FIG. 6 is a plan view for describing a manufacturing step following astep shown in FIG. 4;

FIG. 7 is a plan view for describing a manufacturing step following thestep shown in FIG. 6; and

FIG. 8 is a plan view for showing a modification of FIG. 7.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A preferred embodiment will be described in detail below referring tothe accompanying drawings.

FIG. 1 shows an example of a sectional structure of a laser diodeaccording to an embodiment of the invention. The laser diode is used,for example, as a laser for replaying DVDs of a portable game console orthe like, and has an oscillation wavelength of approximately 660 nm andan output of approximately 4 mW to 5 mW. The laser diode has a structurein which an n-type cladding layer 12, an active layer 13, a p-typecladding layer 14 and a p-side contact layer 15 are laminated in thisorder on the substrate 11.

The substrate 11 is made of n-type GaAs doped with silicon as an n-typeimpurity. The n-type cladding layer 12 is made of, for example, n-typeAlGaInP mixed crystal doped with silicon as an n-type impurity. Theactive layer 13 has a multiquantum well structure including a well layerand a barrier layer which are made of, for example,Al_(x)Ga_(y)In_(1-x-y)P (x≧0 and y≧0) mixed crystal with differentcompositions. The p-type cladding layer 14 is made of, for example,p-type AlGaInP mixed crystal doped with zinc as a p-type impurity. Thep-side contact layer 15 is made of, for example, p-type GaAs doped withzinc as a p-type impurity. A part of the p-type cladding layer 14 andthe p-side contact layer 15 form a thin stripe-shaped portion 16extending in a resonator direction for current confinement, and a regioncorresponding to the p-side contact layer 15 of the active layer 13 is alight-emitting region (a current injection region). The width of thestripe-shaped portion 16 is extremely thin, thereby the optical densityin the light-emitting region is increased, and the threshold value isreduced to approximately ten-odd mA so that the laser diode is allowedto operate at a very low operating current. Moreover, a current blockregion 17 is arranged on both sides of the stripe-shaped portion 16.

A p-side electrode 21 is arranged on the p-side contact layer 15. Thep-side electrode 21 is formed, for example, by laminating titanium (Ti),platinum (Pt) and gold (Au) on the p-side contact layer 15 in thisorder, and is electrically connected to the p-side contact layer 15. Onthe other hand, an n-side electrode 22 is formed on the back surface ofthe substrate 11. The n-side electrode 22 is formed, for example, bylaminating an alloy of gold (Au) and germanium (Ge), nickel (Ni) andgold (Au) on the substrate 11 in order, and then alloying them by heattreatment.

FIG. 2 shows a plan view of the laser diode when viewed from thestripe-shaped portion 16. The p-side electrode 21 is not shown in FIG.2. The laser diode has a pair of facing resonator end surfaces in theextending direction of the stripe-shaped portion 16, that is, a first(front) end surface 10F and a second (rear) end surface 10R, and a laserresonator 10 is formed between the first end surface 10F and the secondend surface 10R. The first end surface 10F is a so-called main emissionend surface, and light generated in the active layer 13 is mainlyemitted from the first end surface 10F. On the first end surface 10F, afirst mirror film 30F made of, for example, an Al₂O₃ single layer isformed. On the other hand, on the second end surface 10R, a secondmirror film 30R made of, for example, an Al₂O₃/a-Si multilayer film isformed.

Moreover, in the laser diode, a light absorption inhibition region 40 isarranged on the second end surface 10R side of the laser resonator 10.The light absorption inhibition region 40 inhibits light generated inthe active layer 13 from being absorbed by a-Si included in the secondmirror film 30R, and is preferably an impurity-doped region including animpurity such as boron (B), silicon (Si) or zinc (Zn). Among them, boron(B) is preferable. Thereby, in the laser diode, even in the case wherethe second mirror film 30R is made of a-Si which absorbs light generatedin the active layer 13, damage to the second end surface 10R can beprevented by mitigating the effect of light absorption.

The end of the light absorption inhibition region 40 does notnecessarily match the second end surface 10R, and, for example, as shownin FIG. 3, a gap 50 may be arranged between the second end surface 10Rand the light absorption inhibition region 40. As will be describedlater in manufacturing steps, it is because in the case where the secondend surface 10R is formed by cleavage after forming the light absorptioninhibition region 40, it is difficult to form the second end surface 10Rso as to match the end of the light absorption inhibition region 40, andthe laser diode can be easily manufactured by arranging the gap 50 withan appropriate width between them.

The laser diode can be manufactured by the following steps.

At first, for example, the substrate 11 made of n-type GaAs is prepared,and the n-type cladding layer 12, the active layer 13, the p-typecladding layer 14 and the p-side contact layer 15 made of theabove-described materials are grown in order on a surface of thesubstrate 11 by, for example, a MOCVD (Metal Organic Chemical VaporDeposition) method. As shown in FIG. 4, a plurality of planned laserresonator regions 10A are included in the substrate 11, the n-typecladding layer 12, the active layer 13, the p-type cladding layer 14 andto the p-side contact layer 15 formed in the above manner, and they areseparated by a plurality of vertical separation lines 10B and aplurality of horizontal separation lines 10C. Referring to FIG. 4, thevertical separation lines 10B and horizontal separation lines 10C areshown by dotted lines, and one planned laser resonator region 10A isdiagonally shaded, and a planned first end surface position 10FA and aplanned second end surface position 10RA are shown in the diagonallyshaded planned laser resonator region 10A.

Next, as shown in FIG. 4, an impurity is diffused or injected from thep-side contact layer 15 so as to form the light absorption inhibitionregion 40 inside the vertical separation line 10B along with the plannedsecond end surface position 10RA.

More specifically, an insulating film (not shown) made of, for example,SiO₂ is formed on the p-side contact layer 15 by, for example, a CVD(Chemical Vapor Deposition) method, and an aperture is formed byphotolithography and etching in a position corresponding to a positionwhere the light absorption inhibition region 40 is planned to be formedin the insulating film. Next, for example, boron (B), silicon (Si) orzinc (Zn) as the impurity, preferably boron (B) is diffused intosemiconductor crystal via the aperture by impurity diffusion or impurityimplantation. Thereby, the impurity reaches the active layer 13, and theactive layer 13 is disordered so that the light absorption inhibitionregion 40 is formed. After that, the insulating film is removed.

At this time, as shown in FIG. 5, the light absorption inhibition region40 is formed along every other vertical separation line 10B, and thevertical separation line 10B may be positioned at the center of thelight absorption inhibition region 40.

After forming the light absorption inhibition region 40, an insulatingfilm (not shown) made of, for example, SiO₂ is formed on the p-sidecontact layer 15 again by, for example, the CVD method, and theinsulating film is subjected to, for example, photolithography andetching to form a mask for forming the stripe-shaped portion 16. Next, apart of the p-side contact layer 15 and a part of the p-type claddinglayer 14 are removed by etching using the mask so as to form thestripe-shaped portion 16 as shown in FIG. 6. After that, the currentblock region 17 is formed on both sides of the stripe-shaped portion 16by selective epitaxial growth using the mask. After that, the mask isremoved.

After forming the stripe-shaped portion 16 and the current block region17, the p-side electrode 21 made of the above-described material isformed on the p-side contact layer 15, and the n-side electrode 22 madeof the above-described material is formed on the back surface of thesubstrate 11 (refer to FIG. 1).

After forming the p-side electrode 21 and the n-side electrode 22, asshown in FIG. 7, the first end surface 10F and the second end surface10R is formed by, for example, cleavage along the vertical separationlines 10B so that the light absorption inhibition region 40 is disposedon the second end surface 10R side of the laser resonator 10. At thistime, as shown in FIG. 8, the gap 50 may be arranged between the secondend surface 10R and the light absorption inhibition region 40. Afterthat, the planned laser resonator regions 10A are further separated bythe horizontal separation lines 10C to form separate laser resonators10. Finally, the first mirror film 30F and the second mirror film 30Rare formed on the first end surface 10F and the second end surface 10R,respectively. Thus, the laser diode shown in FIGS. 1 and 2 is completed.

In the laser diode, when a voltage is applied between the p-sideelectrode 21 and the n-side electrode 22, a current is injected into theactive layer 13 to cause electron-hole recombination, thereby light isemitted. The light is reflected from the first mirror film 30F and thesecond mirror film 30R, and travels between them to cause laseroscillation, and the light is emitted from the first end surface 10F tooutside as a laser beam. In this case, the light absorption inhibitionregion 40 is disposed on the second end surface 10R side opposite to thefirst end surface 10F where the light is emitted, so even in the casewhere the second mirror film 30R is made of a-Si which absorbs lightgenerated in the laser resonator 10, the effect of light absorption ismitigated. Therefore, even if a surge current or an overcurrent isapplied, damage to the second end surface 10R is prevented, and thesurge withstand voltage is improved.

Thus, in the embodiment, the light absorption inhibition region 40 isarranged on the second end surface 10R side opposite to the first endsurface 10F where the light is emitted, so even if the second mirrorfilm 30R is made of a-Si which absorbs light generated in the laserresonator 10, the effect of light absorption can be mitigated, anddamage to the second end surface 10R due to the application of a surgecurrent or an overcurrent can be prevented, and the surge withstandvoltage can be improved. In particular, the laser diode according to theembodiment is suitably used in the case where a very low operatingcurrent and very low current consumption are strongly desired, forexample, as a laser for replaying DVDs or the like mounted in a portablegame console.

Moreover, a-Si is a material which is low-cost and easy to handle, sothe method according to the embodiment is superior in cost and processstability, compared to a method using another material such as TiO_(x).

Further, the light absorption inhibition region 40 is arranged on a sideopposite to the first end surface 10F where light is emitted, so the FFPis not narrowed, and a wide radiation angle θ// can be maintained, andhigh replay characteristics can be obtained specifically in a laser forreplay. Variations in the FFP is not increased, and conditions ofapplication to an optical system are advantageous, and when the laserdiode according to the embodiment is used in an OP (Optical Pickup),advantages can be obtained in stability in jitter or viewcharacteristics. Further, variations in optical coupling can be reduced,and yields can be increased, and stable characteristics can be achieved.

In addition, the recognition accuracy at the time of recognizing theimage of a luminous point can be improved, and variations in performancein the case where an optical integrated device or a hybrid device isformed with high accuracy mounting can be prevented, and yields can beimproved.

Further, in the embodiment, after the light absorption inhibition region40, the first end surface 10F and the second end surface 10R are formedso that the light absorption inhibition region 40 is disposed on thesecond end surface 10R side of the laser resonator 10, so the lightabsorption inhibition region 40 can be easily arranged by adjusting thepositions of the first end surface 10F and the second end surface 10R.The position of the light absorption inhibition region 40 can becontrolled only by the adjustment of the cutting positions of the firstend surface 10F and the second end surface 10R, and a related-artprocess or wafer design can be used.

Although the present invention is described referring to the embodiment,the invention is not necessarily limited to the embodiment, and can bevariously modified. For example, in the embodiment, the case where animpurity-doped region is formed as the light absorption inhibitionregion 40 is described; however, the light absorption inhibition region40 may be formed by removing the active layer 13 and burying the p-typecladding layer 14. Moreover, in the case where the active layer 13 has aquantum well structure, the quantum well thickness of the lightabsorption inhibition region 40 may be reduced.

Moreover, in the embodiment, the case where after the first end surface10F and the second end surface 10R are formed, the planned laserresonator regions 10A are further separated by the horizontal separationlines 10C to form separate laser resonators 10 is described; however,the invention is applicable to a laser bar which is not separated by thehorizontal separation lines 10C.

Further, the invention is not necessarily limited to the material, thethickness, the forming method and forming conditions and the like ofeach layer described in the embodiment, and any other material and anyother thickness may be used, or any other forming method and any otherforming conditions may be used. For example, in the embodiment, the casewhere each layer made of an AlGaInP-based compound is formed by theMOCVD method is described; however, the layer may be formed by any othervapor deposition method such as a MBE (Molecular Beam Epitaxy) method ora hydride vapor phase epitaxy method. The hydride vapor phase epitaxymethod is a vapor deposition method in which halogen contributes totransport or reaction.

In addition, each layer may be made of any other Group III-V compoundsemiconductor including at least indium (In) selected from Group 3Belements in the short form of the periodic table of the elements and atleast phosphorus (P) selected from Group 5B elements in the short formof the periodic table of the elements. Further, the invention isapplicable to a laser diode made of any other material such as aGaN-based material or a GaAs-based material.

Further, in the embodiment, the laser diode is described referring to aspecific structure as an example; however, the invention is applicableto a laser diode with any other structure in the same manner. Forexample, in the embodiment, a ridge waveguide type laser diode which isa combination of a gain waveguide type and a refractive index waveguidetype is described as an example; however, the invention is applicable toa gain waveguide type laser diode and a refractive index waveguide typelaser diode in the same manner.

In addition, in the embodiment, the structure of the laser diode isdescribed in detail; however, all layers are not necessarily included,and any other layer may be added. For example, a light guide layer maybe arranged between the active layer and the n-type cladding layer orthe p-type cladding layer.

Further, the invention is not limited to a low-output,low-threshold-value and low-operating-current laser, and is applicableto high-output laser or the like.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1. A laser diode including a laser resonator between a first end surfaceas a main emission end surface and a second end surface facing the firstend surface, the laser diode comprising: a light absorption inhibitionregion on the second end surface side of the laser resonator.
 2. Thelaser diode according to claim 1, further comprising: a gap between thesecond end surface and the light absorption inhibition region.
 3. Thelaser diode according to claim 1, wherein the light absorptioninhibition region is an impurity-doped region.
 4. The laser diodeaccording to claim 1, further comprising: a mirror film on each of thefirst end surface and the second end surface.
 5. The laser diodeaccording to claim 4, wherein the mirror film on the second end surfaceincludes a-Si.
 6. A method of manufacturing a laser diode, the laserdiode including a laser resonator between a first end surface as a mainemission end surface and a second end surface facing the first endsurface, the method comprising the steps of: forming a semiconductorlayer including a plurality of planned laser resonator regions; forminga light absorption inhibition region in the semiconductor layer along aposition where the second end surface is planned to be formed; andforming the first end surface and the second end surface so that thelight absorption inhibition region is disposed on the second end surfaceside of the laser resonator.
 7. The method of manufacturing a laserdiode according to claim 6, wherein a gap is arranged between the secondend surface and the light absorption inhibition region.
 8. The method ofmanufacturing a laser diode according to claim 6, wherein animpurity-doped region is formed as the light absorption inhibitionregion.
 9. The method of manufacturing a laser diode according to claim6, further comprising the step of: forming a mirror film on each of thefirst end surface and the second end surface.
 10. The method ofmanufacturing a laser diode according to claim 9, wherein the mirrorfilm on the second end surface includes a-Si.